Low-Dimensional Group III-V Compound Semiconductor Structures


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Book Description

InAs three-dimensional (3D) islands grown by molecular beam epitaxy on GaAs are described. The two-dimensional to three-dimensional morphological transition was studied with two complementary analytical techniques; scanning tunneling microscope and photoluminescence/photoluminescence excitation spectroscopy, to identify key features that exist at different stages of morphological evolution.

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