The GaN-based semiconductors are potentially suitable materials for optoelectronic and electronic applications. Among various GaN-based electronic devices investigated, the MOS devices show potentially higher operating frequency, large output power gain, and better thermal stability, in comparison with the well developed Si-based MOS devices. Various deposition methods, which have been used to deposit oxides or insulators on GaN-based semiconductors to fabricate MOS devices, are summarized...
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